Japan’s Mitsubishi Electric Corporation has introduced two new amplifiers for UHF RFID reader/writers. The amplifiers, which hit the market Nov. 25, are designed to reduce the number of peripheral components needed for a reader/writer, reducing their productions prices.
The devices feature a built-in impedance-matched circuit for both input and output, which can reduce spurious radiation. Mitsubishi calls this an industry first, and the built-in design eliminates the need for external circuits, simplifying the circuit design and reducing production costs.
The two amplifiers are high-voltage silicon metal oxide semiconductor field effect transistors, with drain voltage ranges from 3.3 to 5 volts. With this range, a single amplifier can meet the requirements of both mobile reader/writers, which mainly uses a power source of 3.3 volts, and fixed devices, which mainly use 5 volts. ![[end]](/resources/bullet/archive-4.gif)
